Formation of PIn defect in annealed liquid-encapsulated Czochralski InP

Compensation defects in annealed undoped liquid encapsulated Czochralski InP

Electrical conduction in annealed semi-insulating InP

‏‎suppression of coke formation in thermal cracking by coke inhibitors‎‏

‏‎the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...

Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon

The effect of stress (exerted by hydrostatic pressure of argon ambient enhanced up to 1.2 GPa) on the creation of oxygen-related defects in annealed Czochralski grown silicon (Cz-Si) was investigated. Concentrations of oxygen interstitials and of dislocations in Cz-Si samples with before-created nucleation centres for oxygen precipitation were markedly lower after pressure treatment at 1120 to ...

Boron-oxygen defect imaging in p-type Czochralski silicon